dual igbtmod? nfh-series module 200 amperes/600 volts CM200DU-12NFH powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 1 rev. 11/09 outline drawing and circuit diagram description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low v ce(sat) low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete part module number you desire from the table below -i.e. CM200DU-12NFH is a 600v (v ces ), 200 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 200 12 dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.18+0.04/-0.01 30.0+1.0/-0.5 d 3.150.01 80.00.25 e 0.43 11.0 f 0.16 4.0 g 0.71 18.0 h 0.51 13.0 j 0.53 13.5 k 0.91 23.0 l 0.83 21.2 m 0.67 17.0 dimensions inches millimeters n 0.28 7.0 p m5 metric m5 q 0.26 dia. dia. 6.5 r 0.02 4.0 s 0.94 24.0 t 0.3 7.5 u 0.33 8.5 v 0.63 16.0 w 0.1 2.5 x 0.98 25.0 y 0.47 12.0 z 0.11 2.8 r c2e1 e2 c1 e1 g1 e2 g2 g2 e2 c2e1 e2 c1 e1 g1 t c measurement point s t z e g f f b a d k k m n y j w v x v c w w w p - nuts (3 typ) q - (2 typ) h label l u
CM200DU-12NFH dual igbtmod? nfh-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 2 rev. 11/09 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol cm200du-12nf units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 200* amperes peak collector current i cm 400* amperes emitter current** (t c = 25c) i e 200* amperes peak emitter current** i em 400* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 590 watts maximum collector dissipation (t c' = 25c, t j' 150c) p c 830 watts mounting torque, m5 main terminal 30 in-lb mounting torque, m6 mounting 40 in-lb weight 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.0 6.0 7.0 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c 2.0 2.7 volts i c = 200a, v ge = 15v, t j = 125c 1.95 volts total gate charge q g v cc = 300v, i c = 200a, v ge = 15v 1240 nc emitter-collector voltage** v ec i e = 100a, v ge = 0v 2.6 volts dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 55 nf output capacitance c oes v ce = 10v, v ge = 0v 3.6 nf reverse transfer capacitance c res 2.0 nf inductive turn-on delay time t d(on) 250 ns load rise time t r v cc = 300v, i c = 200a, 150 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 6.3, 500 ns time fall time t f inductive load switching operation, 150 ns diode reverse recovery time** t rr i e = 200a 150 ns diode reverse recovery charge** q rr 3.5 c * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM200DU-12NFH dual igbtmod? nfh-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 3 rev. 11/09 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference 0.21 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.35 c/w point per outline drawing thermal resistance, junction to case r th(j-c) 'q per igbt 1/2 module, 0.15 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.07 c/w external gate resistance r g 3.1 31 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 0 0.5 1.5 2.0 1.0 3.0 2.5 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 68 10 14 12 16 18 20 4 3 2 1 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 01 23 45 100 0 v ge = 20v 11 10 15 8 8.5 9 9.5 7 7.5 t j = 25 o c 200 300 400 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3.0 1.5 1.0 2.0 0 100 300 2.5 0.5 0 400 v ge = 15v t j = 25c t j = 125c 200 10 -1 13 collector current, i c , (amperes) 10 3 10 1 10 2 10 1 10 2 switching time, (ns) half-bridge switching characteristics (typical) 10 3 t d(off) t d(on) t r t f v cc = 300v v ge = 15v r g = 6.3 t j = 125c inductive load
CM200DU-12NFH dual igbtmod? nfh-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 4 rev. 11/09 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.21c/w (igbt) r th(j-c) = 0.35c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 600 900 300 1800 1200 1500 v cc = 300v v cc = 200v i c = 200a collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 6.3? t j = 125c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) e sw(on) e sw(off) gate resistance, r g , (?) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 300v v ge = 15v i c = 200a t j = 125c inductive load c snubber at bus 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 6.3? t j = 125c inductive load c snubber at bus 10 3 reverse recovery switching loss vs. emitter current (typical) e rr emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) 10 3 v cc = 300v v ge = 15v r g = 6.3? t j = 25c inductive load i rr t rr gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 v cc = 300v v ge = 15v i e = 200a t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. gate resistance (typical) e rr
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